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Effect of boron doping in the microwave surface resistance of neutron irradiated melt-textured Y_1.6Ba_2.3Cu_3.3O_7-x samples

机译:硼掺杂对中子微波表面电阻的影响   辐照熔融织构Y_1.6Ba_2.3Cu_3.3O_7-x样品

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摘要

We report on the microwave surface resistance of melt-texturedY_1.6Ba_2.3Cu_3.3O_7-x samples, doped with different amount of B_2O_3 and,subsequently, irradiated by thermal neutrons at the fluence of 1.476 \times10^17 cm^-2. The microwave surface resistance has been measured as a functionof temperature and DC magnetic field. The experimental results arequantitatively discussed in the framework of the Coffey and Clem theory,properly adapted to take into account the d-wave nature of cupratesuperconductors. By fitting the experimental data at zero DC field, we havehighlighted the effects of the induced defects in the general properties of thesamples, including the intergranular region. The analysis of the resultsobtained at high DC fields allowed us to investigate the fluxon dynamics anddeduce the depinning frequency; in particular, we have shown that the additionof B_2O_3 up to 0.1 wt% increases the effectiveness of the defects to hinderthe fluxon motion induced by the microwave current.
机译:我们报道了掺有不同量的B_2O_3并随后以1.476 \ times10 ^ 17 cm ^ -2的注量由热中子辐照的,具有熔融结构的Y_1.6Ba_2.3Cu_3.3O_7-x样品的微波表面电阻。已经测量了微波表面电阻与温度和直流磁场的关系。在科菲和克莱姆理论的框架下,对实验结果进行了定量讨论,并适当地考虑了铜酸盐超导体的d波性质。通过在零直流磁场下拟合实验数据,我们突出了诱发缺陷对样品总体性能(包括晶间区域)的影响。对在高直流磁场下获得的结果的分析使我们能够研究磁通动力学并推论出钉扎频率。特别是,我们已经表明,添加最多0.1 wt%的B_2O_3可以提高缺陷的有效性,以阻止微波电流引起的磁通运动。

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